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MIOMD

Sep 05, 2010 - Sep 09, 2010
8:00:AM - 5:00:PM
Shanghai, China

The mid-infrared spectral region covers the wavelength range between 2 to 25 μm and contains the fundamental fingerprint absorption bands of almost all poly-atomic molecules of practical interest. In recent years, there have been pioneering breakthroughs and rapid progress in the field of Mid-Infrared Optoelectronics: Materials and Devices. Mid-IR lasers have developed from a few individual wavelengths to covering a continuous series of wavelength range. CW mode operation at or beyond room temperature for mid-IR F-P lasers with high power and single mode lasers with wide continuously tunable wavelength range have been demonstrated. New structures for lasers, light-emitting diodes, and detectors have been proposed and demonstrated. Improved optoelectronic devices have been used in applications such as environmental monitoring and medical imaging. However, we are still facing the challenges with the ultimate goal of enabling mid-infrared optoelectronics as a mainstream technology.

The 10th international conference on Mid-Infrared Optoelectronics: Materials and Devices (IC-MIOMD-X) will be held in Shanghai, China from the 5th to the 9th September 2010. IC-MIOMD-X will bring scientists, engineers and end users working in the rapidly advancing area of mid-infrared optoelectronics together from around the world. The conference will explore new topics to address the rising challenges of enabling mid-infrared optoelectronics as a mainstream technology in research and technology. It provides an opportunity for researchers to share their latest achievements, exchange information, foster collaborative relationships, and explore future directions. The exhibition at MIOMD-X also provides a place for extensive interaction between researchers and end users with vendors of equipment, related instrumentation and materials suppliers for mid-IR lasers, detectors and their characterization.